BSF045N03MQ3G datasheet

Маркировка

BSF045N03MQ3G
Производитель

Infineon Technologies
Описание

Infineon Technologies BSF045N03MQ3G Mfr Package Description: GREEN, METAL, WDSON-2 Lead Free: Yes EU RoHS Compliant: Yes Package Shape: RECTANGULAR Package Style: CHIP CARRIER Surface Mount: Yes Terminal Form: NO LEAD Terminal Finish: NOT SPECIFIED Terminal Position: BOTTOM Number of Terminals: 2 Package Body Material: METAL Configuration: SINGLE WITH BUILT-IN DIODE Case Connection: DRAIN Number of Elements: 1 Transistor Application: SWITCHING Transistor Element Material: SILICON Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE POWER Drain Current-Max (ID): 18 A DS Breakdown Voltage-Min: 30 V Avalanche Energy Rating (Eas): 30 mJ Drain-source On Resistance-Max: 0.0059 ohm Pulsed Drain Current-Max (IDM): 252 A
Количество страниц

11 шт.
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799,92 KB